Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures


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Abstract

Specific features (abrupt changes in current caused by voltage variation) of nonequilibrium depletion in metal–insulator–semiconductor structures based on gallium arsenide and silicon with a 40-nm-thick film of yttria-stabilized zirconia were revealed. These features may help extend the range of application of the nonequilibrium depletion effect in microelectronics.

About the authors

S. V. Tikhov

Lobachevsky State University of Nizhny Novgorod

Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950

O. N. Gorshkov

Lobachevsky State University of Nizhny Novgorod; Research Institute for Physics and Technology

Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

M. N. Koryazhkina

Lobachevsky State University of Nizhny Novgorod

Author for correspondence.
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950

I. N. Antonov

Lobachevsky State University of Nizhny Novgorod; Research Institute for Physics and Technology

Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950

A. P. Kasatkin

Lobachevsky State University of Nizhny Novgorod

Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950

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