Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures
- Authors: Tikhov S.V.1, Gorshkov O.N.1,2, Koryazhkina M.N.1, Antonov I.N.1,2, Kasatkin A.P.1
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Affiliations:
- Lobachevsky State University of Nizhny Novgorod
- Research Institute for Physics and Technology
- Issue: Vol 42, No 2 (2016)
- Pages: 138-142
- Section: Article
- URL: https://bakhtiniada.ru/1063-7850/article/view/197097
- DOI: https://doi.org/10.1134/S1063785016020139
- ID: 197097
Cite item
Abstract
Specific features (abrupt changes in current caused by voltage variation) of nonequilibrium depletion in metal–insulator–semiconductor structures based on gallium arsenide and silicon with a 40-nm-thick film of yttria-stabilized zirconia were revealed. These features may help extend the range of application of the nonequilibrium depletion effect in microelectronics.
About the authors
S. V. Tikhov
Lobachevsky State University of Nizhny Novgorod
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
O. N. Gorshkov
Lobachevsky State University of Nizhny Novgorod; Research Institute for Physics and Technology
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
M. N. Koryazhkina
Lobachevsky State University of Nizhny Novgorod
Author for correspondence.
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
I. N. Antonov
Lobachevsky State University of Nizhny Novgorod; Research Institute for Physics and Technology
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. P. Kasatkin
Lobachevsky State University of Nizhny Novgorod
Email: mahavenok@mail.ru
Russian Federation, Nizhny Novgorod, 603950
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