A magnetosensitive thin-film silicon Hall-type field-effect transistor with operating temperature range expanded up to 350°C


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We describe a magnetosensitive device consisting of a combination of a thin-film Si transistor with built-in conducting channel (fabricated by the silicon-on-insulator technology) and a Hall-type sensor (HS). The transistor has a double-gate field control system of the metal–insulator–semiconductor–insulator–metal type and operates in the regime of carrier accumulation in the channel at partial depletion of adjacent regions of the Si film. It is established that the device can operate at temperatures up to about 350°C, which is 160–180°C higher than the maximum operating temperature of HSs based on bulk Si crystals and comparable with HSs based on wide-bandgap semiconductors.

Sobre autores

A. Leonov

Institute of Problems of Microelectronics Technology and High Purity Materials

Email: malykhanton21@gmail.com
Rússia, Chernogolovka, Moscow oblast, 142432

A. Malykh

Institute of Problems of Microelectronics Technology and High Purity Materials

Autor responsável pela correspondência
Email: malykhanton21@gmail.com
Rússia, Chernogolovka, Moscow oblast, 142432

V. Mordkovich

Institute of Problems of Microelectronics Technology and High Purity Materials

Email: malykhanton21@gmail.com
Rússia, Chernogolovka, Moscow oblast, 142432

M. Pavlyuk

Milandr Design and Production Corporation

Email: malykhanton21@gmail.com
Rússia, Moscow, 123182

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