SmS/SiC Heterostructure and Its Associated Thermovoltaic Effect


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A heterostructure based on single-crystal SiC and a polycrystalline SmS thin film has been studied. In the temperature interval 300–456 K, the thermovoltaic effect has been measured in the structure, the amount of which reaches ~12 mV at 456 K. It has been shown that the amount of this effect correlates with its concentration model developed earlier.

作者简介

V. Kaminskii

Ioffe Institute

编辑信件的主要联系方式.
Email: VladimirKaminski@gmail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

A. Lebedev

Ioffe Institute; St. Petersburg State Electrotechnical University LETI

Email: VladimirKaminski@gmail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197376

S. Solov’ev

Ioffe Institute

Email: VladimirKaminski@gmail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

N. Sharenkova

Ioffe Institute

Email: VladimirKaminski@gmail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021

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