Formation of textured Ni(200) and Ni(111) films by magnetron sputtering


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The effect of the working gas pressure (P ≈ 1.33–0.09 Pa) and the substrate temperature (Ts ≈ 77–550 K) on the texture and the microstructure of nickel films deposited by magnetron sputtering onto SiO2/Si substrates is studied. Ni(200) films with a transition type of microstructure are shown to form at growth parameters P ≈ 0.13–0.09 Pa and Ts ≈ 300–550 K, which ensure a high migration ability of nickel adatoms on a substrate. This transition type is characterized by a change of the film structure from quasi-homogeneous to quasi-columnar when a film reaches a critical thickness. Ni(111) films with a columnar microstructure and high porosity form at a low migration ability, which takes place at P ≈ 1.33–0.3 Pa or upon cooling a substrate to Ts ≈ 77 K.

作者简介

A. Dzhumaliev

Institute of Radio Engineering and Electronics, Saratov Branch; Chernyshevskii State University

Email: yvnikulin@gmail.com
俄罗斯联邦, Zelenaya ul. 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012

Yu. Nikulin

Institute of Radio Engineering and Electronics, Saratov Branch; Chernyshevskii State University

编辑信件的主要联系方式.
Email: yvnikulin@gmail.com
俄罗斯联邦, Zelenaya ul. 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012

Yu. Filimonov

Institute of Radio Engineering and Electronics, Saratov Branch; Chernyshevskii State University; Saratov State Technical University

Email: yvnikulin@gmail.com
俄罗斯联邦, Zelenaya ul. 38, Saratov, 410019; ul. Astrakhanskaya 83, Saratov, 410012; Politekhnicheskaya ul. 77, Saratov, 410054

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