Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes)

Аннотация

The time characteristics of pulse generators based on sharp-recovery 4H : SiC drift diodes have been calculated. It has been found that the speed of n-base 4H-SiC diodes is superior to that of p-base diodes with the amplitude and initial pedestal in the output voltage (<5% of the amplitude) versus the time curve being the same.