Effect of bias voltage and nitrogen pressure on the structure and properties of vacuum-arc (Mo + Ti6%Si)N coatings
- Авторы: Beresnev V.M.1, Sobol’ O.V.1, Litovchenko S.V.1, Pogrebnyak A.D.1, Srebnyuk P.A.1, Novikov V.Y.1, Kolesnikov D.A.1, Meilekhov A.A.1, Postel’nik A.A.1, Nemchenko U.S.1
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Учреждения:
- Karazin National University
- Выпуск: Том 62, № 5 (2017)
- Страницы: 795-798
- Раздел: Physical Electronics
- URL: https://bakhtiniada.ru/1063-7842/article/view/199452
- DOI: https://doi.org/10.1134/S1063784217050073
- ID: 199452
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Аннотация
Effect of deposition conditions in reactive nitrogen atmosphere on the growth morphology, phase composition, structure, and mechanical characteristics (microhardness) of vacuum-arc multilayer coatings obtained using evaporation of the (Ti6%Si) and Mo cathodes is studied with the aid of raster electron microscopy, energy-dispersive elemental microanalysis, and microindentation. It is demonstrated that nitrogen atoms are redistributed to the region of the strongest nitride-forming element (Ti) in relatively thin layers (about 7 nm) consisting of substances with substantially different heats of formation (−336 kJ/mol for TiN and −34 kJ/mol for MoN). Such a process leads to lamination with the formation of nitride TiN and metal Mo (weaker nitride-forming element). Nitrogen–metal bonds are saturated in the layers of strong nitrideforming elements Ti(Si) when the nitrogen pressure increases from 6 × 10–4 to 5 × 10–3 Torr in the condensation procedure. Thus, the compound is filled with nitrogen to the stoichiometric composition and, then, the second system of layers based on molybdenum is saturated with nitrogen with the formation of the γ-Mo2N phase. An increase in bias potential USP from–100 to–200 V stimulates mixing in thin layers with the formation of the (Ti, Si, Mo)N solid solution and leads to a decrease in microhardness from 37 to 32 GPa.
Об авторах
V. Beresnev
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
O. Sobol’
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
S. Litovchenko
Karazin National University
Автор, ответственный за переписку.
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
A. Pogrebnyak
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
P. Srebnyuk
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
V. Novikov
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
D. Kolesnikov
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
A. Meilekhov
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
A. Postel’nik
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
U. Nemchenko
Karazin National University
Email: s.lytovchenko@karazin.ua
Украина, pl. Svobody 4, Kharkov, 61022
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