Silicon-based shortwave differential photodetector

Abstract

The silicon-based photodetector that contains two n⁺–p photodiode with equal areas has been described. One of the photodiodes had a wide spectral characteristic with high sensitivity in the UV range. The sensitivity of the second photodiode was decreased in the shortwave range via the formation of additional recombination centers in the near-surface region using the implantation of As ions. The study of the spectral sensitivity of the differential signal obtained by photocurrent subtraction has revealed a profound shortwave spectral characteristic. The boundaries of spectral range at λ_0.5 were in the limits of 0.27–0.44 μm. The maximum sensitivity corresponded to λ_max = 0.36 μm. The sensitivity of the differential channel at this wavelength reached 83% of that of the wide-range channel.