电邮这篇文章 Relaxation of the electric current in Si3N4: Experiment and numerical simulation
- 作者: Novikov Y.N.1, Gritsenko V.A.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- 期: 卷 59, 编号 1 (2017)
- 页面: 47-52
- 栏目: Dielectrics
- URL: https://bakhtiniada.ru/1063-7834/article/view/199459
- DOI: https://doi.org/10.1134/S1063783417010255
- ID: 199459
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详细
The relaxation of the electric current in a metal–nitride–oxide–semiconductor structure has been measured experimentally. The experiment has been compared with the calculation based on the two-band conduction model and the multiphonon mechanism of the ionization of traps. The upper estimate obtained for the recombination cross section from the comparison of the experiment with the calculation is found to be 5 × 10–13 cm2.
作者简介
Yu. Novikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: nov@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrentieva 13, Novosibirsk, 630090
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: nov@isp.nsc.ru
俄罗斯联邦, pr. Akademika Lavrentieva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090
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