To the Theory of Electronic States of an Epitaxial Graphene Bilayer
- Авторлар: Abdullaev G.O.1, Alisultanov Z.Z.1,2
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Мекемелер:
- Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
- Dagestan State University
- Шығарылым: Том 61, № 3 (2019)
- Беттер: 488-492
- Бөлім: Graphenes
- URL: https://bakhtiniada.ru/1063-7834/article/view/205120
- DOI: https://doi.org/10.1134/S1063783419030028
- ID: 205120
Дәйексөз келтіру
Аннотация
The energy spectrum of an epitaxial graphene bilayer is investigated. The most general case of spontaneous breaking of the P symmetry within and between the layers is considered. The influence of the gate voltage on the energy spectrum is studied. It is shown that a general profile of this influence substantially depends on the ratio between bandgaps corresponding to different layers. At a certain value of the Coulomb potential caused by the transition of a charge from the substrate, the bandgap collapses. These studies are carried out for two types of layer packing in the bilayer, namely, the AB and AA packings.
Авторлар туралы
G. Abdullaev
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences
Email: zaur0102@gmail.com
Ресей, Makhachkala
Z. Alisultanov
Amirkhanov Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences; Dagestan State University
Хат алмасуға жауапты Автор.
Email: zaur0102@gmail.com
Ресей, Makhachkala; Makhachkala
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