Light-Emitting Field-Effect Transistors Based on Composite Films of Polyfluorene and CsPbBr3 Nanocrystals

Abstract

Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr₃) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr₃ films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm²/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm²/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr₃ can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.