Antisite defects and valence state of vanadium in Na3V2(PO4)3
- Authors: Nizamov F.A.1, Togulev P.N.1, Abdullin D.R.1, Khantimerov S.M.1, Balaya P.2, Suleimanov N.M.1
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Affiliations:
- E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI) of the Kazan Scientific Center of the Russian Academy of Sciences
- National University of Singapore
- Issue: Vol 58, No 3 (2016)
- Pages: 475-480
- Section: Dielectrics
- URL: https://bakhtiniada.ru/1063-7834/article/view/197064
- DOI: https://doi.org/10.1134/S1063783416030240
- ID: 197064
Cite item
Abstract
Electron paramagnetic resonance (EPR) studies have been performed with the aim of determining the valence state and local crystal structure of the nearest environment of vanadium ions in the initial, charged, and discharged samples of the cathode material NaxV2(PO4)3 (1 ≤ x ≤ 3). It has been found that the charged sample (x = 1) is characterized by an intense signal corresponding to V4+ ions located in a highly distorted octahedral crystal field. An EPR signal with the g-factor close to the g-factor of the V4+ ion has also been observed in the initial sample (x = 3), where the intensity of the resonance signal is one order of magnitude lower than that in the charged sample. It has been revealed that the resonance signal under consideration is associated with the formation of antisite defects when a part of vanadium ions are located in sites of sodium ions. It has also been found that the intensity of this signal increases after a complete charge–discharge cycle (x = 3).
About the authors
F. A. Nizamov
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI) of the Kazan Scientific Center of the Russian Academy of Sciences
Author for correspondence.
Email: farkhad90@mail.ru
Russian Federation, Sibirsky tract 10/7, Kazan, 420029
P. N. Togulev
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI) of the Kazan Scientific Center of the Russian Academy of Sciences
Email: farkhad90@mail.ru
Russian Federation, Sibirsky tract 10/7, Kazan, 420029
D. R. Abdullin
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI) of the Kazan Scientific Center of the Russian Academy of Sciences
Email: farkhad90@mail.ru
Russian Federation, Sibirsky tract 10/7, Kazan, 420029
S. M. Khantimerov
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI) of the Kazan Scientific Center of the Russian Academy of Sciences
Email: farkhad90@mail.ru
Russian Federation, Sibirsky tract 10/7, Kazan, 420029
P. Balaya
National University of Singapore
Email: farkhad90@mail.ru
Singapore, 21 Lower Kent Ridge Road, Singapore, 119077
N. M. Suleimanov
E. K. Zavoisky Kazan Physical-Technical Institute (KPhTI) of the Kazan Scientific Center of the Russian Academy of Sciences
Email: farkhad90@mail.ru
Russian Federation, Sibirsky tract 10/7, Kazan, 420029
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