电邮这篇文章 Polarized Retroreflection from Nanoporous III–V Semiconductors
- 作者: Prislopski S.Y.1, Gaponenko S.V.1, Monaico E.2, Sergentu V.V.3, Tiginyanu I.M.2
-
隶属关系:
- Stepanov Institute of Physics, National Academy of Sciences of Belarus
- National Center for Materials Study and Testing, Technical University of Moldova
- Institute of Applied Physics of the Academy of Sciences of Moldova
- 期: 卷 52, 编号 16 (2018)
- 页面: 2068-2069
- 栏目: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION
- URL: https://bakhtiniada.ru/1063-7826/article/view/205339
- DOI: https://doi.org/10.1134/S1063782618160248
- ID: 205339
如何引用文章
开放存取
##reader.subscriptionAccessGranted##
订阅存取
详细
“Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we assume that coherent backscattering is the underlying physical mechanism of this phenomenon”.
作者简介
S. Prislopski
Stepanov Institute of Physics, National Academy of Sciences of Belarus
编辑信件的主要联系方式.
Email: s.prislopski@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072
S. Gaponenko
Stepanov Institute of Physics, National Academy of Sciences of Belarus
Email: s.prislopski@ifanbel.bas-net.by
白俄罗斯, Minsk, 220072
E. Monaico
National Center for Materials Study and Testing, Technical University of Moldova
Email: s.prislopski@ifanbel.bas-net.by
摩尔多瓦共和国, Chisinau, MD-2004
V. Sergentu
Institute of Applied Physics of the Academy of Sciences of Moldova
Email: s.prislopski@ifanbel.bas-net.by
摩尔多瓦共和国, Chisinau, MD-2028
I. Tiginyanu
National Center for Materials Study and Testing, Technical University of Moldova
Email: s.prislopski@ifanbel.bas-net.by
摩尔多瓦共和国, Chisinau, MD-2004
补充文件
