🔧На сайте запланированы технические работы
25.12.2025 в промежутке с 18:00 до 21:00 по Московскому времени (GMT+3) на сайте будут проводиться плановые технические работы. Возможны перебои с доступом к сайту. Приносим извинения за временные неудобства. Благодарим за понимание!
🔧Site maintenance is scheduled.
Scheduled maintenance will be performed on the site from 6:00 PM to 9:00 PM Moscow time (GMT+3) on December 25, 2025. Site access may be interrupted. We apologize for the inconvenience. Thank you for your understanding!

 

Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

This study is concerned with the specific features of how high-Q closed modes operating on the total-internal-reflection effect in large-size (up to hundreds or thousands of wavelengths) rectangular resonators based on InGaAs/GaAs/AlGaAs laser heterostructures are formed. The specific features of the spectral composition and spatial configurations of closed-mode configurations are experimentally examined. The presence of frequency combs in the spectra is demonstrated and their correspondence to the separate spatial configurations of closed modes is shown. The effect of changing the pumping level and the temperature on the mode composition of the emission is also considered.

Sobre autores

A. Podoskin

Ioffe Institute

Autor responsável pela correspondência
Email: podoskin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

D. Romanovich

Ioffe Institute

Email: podoskin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

I. Shashkin

Ioffe Institute

Email: podoskin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

P. Gavrina

Ioffe Institute

Email: podoskin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

Z. Sokolova

Ioffe Institute

Email: podoskin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

S. Slipchenko

Ioffe Institute

Email: podoskin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

N. Pikhtin

Ioffe Institute

Email: podoskin@mail.ioffe.ru
Rússia, St. Petersburg, 194021

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2019