Мақаланы E-mail арқылы жіберу Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision
- Авторлар: Ploog K.H.1
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Мекемелер:
- Paul Drude Institute for Solid State Electronics
- Шығарылым: Том 52, № 5 (2018)
- Беттер: 615-617
- Бөлім: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization
- URL: https://bakhtiniada.ru/1063-7826/article/view/203186
- DOI: https://doi.org/10.1134/S1063782618050238
- ID: 203186
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
In this contribution a few selected examples to engineer material interfaces in nanostructured solids with atomic precision by means of molecular beam epitaxy (MBE) are presented. The examples include 2D electron gas systems for quantum transport and mesoscopic physics, quantum cascade lasers, Sb-based materials, ferromagnet-semiconductor heterostructures, as well as oxide materials for electronics and quantum physics. Finally, the prospects to fabricate novel van-der-Waals heterostructures are briefly discussed.
Авторлар туралы
K. Ploog
Paul Drude Institute for Solid State Electronics
Хат алмасуға жауапты Автор.
Email: KlausH.Ploog@t-online.de
Германия, Berlin
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