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The Features of GaAs Nanowire SEM Images


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Abstract

The detailed study of GaAs nanowires synthesized by molecular beam epitaxy performed by scanning electron microscopy allowed to reveal the presence of specific contrast in the images obtained. To understand the causes of the phenomenon the transmission electron microscopy of nanowire crystal structure was carried out. The results showed that it could be caused by the segments having polytypic crystal phase. It was also confirmed by the modelling of the electron beam scattering on such nanowire arrays.

About the authors

I. P. Soshnikov

St. Petersburg Academic University Russian Academy of Sciences; Ioffe Institute; Institute for Analytical Instrumentation Russian Academy of Sciences

Author for correspondence.
Email: ipsosh@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103

K. P. Kotlyar

St. Petersburg Academic University Russian Academy of Sciences; St. Petersburg State University

Email: ipsosh@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 199034

N. A. Bert

Ioffe Institute

Email: ipsosh@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021

D. A. Kirilenko

Ioffe Institute; ITMO University

Email: ipsosh@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 197101

A. D. Bouravleuv

St. Petersburg Academic University Russian Academy of Sciences; Ioffe Institute; Institute for Analytical Instrumentation Russian Academy of Sciences

Email: ipsosh@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103

G. E. Cirlin

St. Petersburg Academic University Russian Academy of Sciences; Ioffe Institute; Institute for Analytical Instrumentation Russian Academy of Sciences; St. Petersburg State University

Email: ipsosh@beam.ioffe.ru
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194021; St. Petersburg, 190103; St. Petersburg, 199034

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