Formation of a  p -type emitter with the involvement of surfactants in GaAs photoelectric converters

L. B. Karlina; A. S. Vlasov; B. Ya. Ber; D. Yu. Kazantsev; N. Kh. Timoshina; M. M. Kulagina; A. B. Smirnov

doi:10.1134/S1063782617050116

Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters

Autores: Karlina L.B.¹, Vlasov A.S.¹, Ber B.Y.¹, Kazantsev D.Y.¹, Timoshina N.K.¹, Kulagina M.M.¹, Smirnov A.B.¹
Afiliações:
1. Ioffe Institute
Edição: Volume 51, Nº 5 (2017)
Páginas: 667-671
Seção: Physics of Semiconductor Devices
URL: https://bakhtiniada.ru/1063-7826/article/view/199928
DOI: https://doi.org/10.1134/S1063782617050116
ID: 199928

Citar

Texto integral

Acesso aberto
Acesso é fechado

Acesso está concedido
Acesso é fechado

Somente assinantes

Resumo
Sobre autores
Bibliografia
Arquivos suplementares
Estatísticas

Resumo

The comparative characteristics of photovoltaic converters (of laser radiation) based on gallium arsenide with a p-type emitter formed by gas-phase diffusion in the presence of surfactants (isovalent impurities) and without them are reported. It is shown that the use of indium and phosphorus in the process of the formation of a p–n junction significantly affects the characteristics of the obtained devices.