Effect of active-region “volume” on the radiative properties of laser heterostructures with radiation output through the substrate
- Авторы: Nekorkin S.M.1, Zvonkov B.N.1, Baidus N.V.1, Dikareva N.V.1, Vikhrova O.V.1, Afonenko A.A.2, Ushakov D.V.2
-
Учреждения:
- Physicotechnical Research Institute
- Belarussian State University
- Выпуск: Том 51, № 1 (2017)
- Страницы: 73-77
- Раздел: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/199328
- DOI: https://doi.org/10.1134/S1063782617010158
- ID: 199328
Цитировать
Аннотация
The radiative properties of InGaAs/GaAs/InGaP laser structures with radiation output through the substrate depending on the number of quantum wells in the active region and laser diodes on their basis are investigated. It is established that the presence of six–eight quantum wells in the active region is optimum from the viewpoint of observable values of the threshold current and the output optical power of lasers.
Об авторах
S. Nekorkin
Physicotechnical Research Institute
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
B. Zvonkov
Physicotechnical Research Institute
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
N. Baidus
Physicotechnical Research Institute
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
N. Dikareva
Physicotechnical Research Institute
Автор, ответственный за переписку.
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
O. Vikhrova
Physicotechnical Research Institute
Email: dnat@ro.ru
Россия, Nizhny Novgorod, 603950
A. Afonenko
Belarussian State University
Email: dnat@ro.ru
Белоруссия, Minsk, 220030
D. Ushakov
Belarussian State University
Email: dnat@ro.ru
Белоруссия, Minsk, 220030
Дополнительные файлы
