De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The field dependence of magnetization of a silicon nanosandwich measured at room temperature in weak magnetic fields manifests de Haas–van Alphen oscillations, the behavior of which is explained under the condition of the dependence of the effective carrier mass on the external magnetic field.

Sobre autores

V. Romanov

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Rússia, St. Petersburg, 195251

V. Kozhevnikov

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Rússia, St. Petersburg, 195251

C. Tracey

Peter the Great St. Petersburg Polytechnic University

Email: Bagraev@mail.ru
Rússia, St. Petersburg, 195251

N. Bagraev

Peter the Great St. Petersburg Polytechnic University; Ioffe Institute

Autor responsável pela correspondência
Email: Bagraev@mail.ru
Rússia, St. Petersburg, 195251; St. Petersburg, 194021

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2019