Enviar artigo por via de e-mail Polarized Retroreflection from Nanoporous III–V Semiconductors
- Autores: Prislopski S.Y.1, Gaponenko S.V.1, Monaico E.2, Sergentu V.V.3, Tiginyanu I.M.2
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Afiliações:
- Stepanov Institute of Physics, National Academy of Sciences of Belarus
- National Center for Materials Study and Testing, Technical University of Moldova
- Institute of Applied Physics of the Academy of Sciences of Moldova
- Edição: Volume 52, Nº 16 (2018)
- Páginas: 2068-2069
- Seção: 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION
- URL: https://bakhtiniada.ru/1063-7826/article/view/205339
- DOI: https://doi.org/10.1134/S1063782618160248
- ID: 205339
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Resumo
“Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V semiconductors. Because of high polarization of retroreflected waves we assume that coherent backscattering is the underlying physical mechanism of this phenomenon”.
Sobre autores
S. Prislopski
Stepanov Institute of Physics, National Academy of Sciences of Belarus
Autor responsável pela correspondência
Email: s.prislopski@ifanbel.bas-net.by
Belarus, Minsk, 220072
S. Gaponenko
Stepanov Institute of Physics, National Academy of Sciences of Belarus
Email: s.prislopski@ifanbel.bas-net.by
Belarus, Minsk, 220072
E. Monaico
National Center for Materials Study and Testing, Technical University of Moldova
Email: s.prislopski@ifanbel.bas-net.by
Moldova, Chisinau, MD-2004
V. Sergentu
Institute of Applied Physics of the Academy of Sciences of Moldova
Email: s.prislopski@ifanbel.bas-net.by
Moldova, Chisinau, MD-2028
I. Tiginyanu
National Center for Materials Study and Testing, Technical University of Moldova
Email: s.prislopski@ifanbel.bas-net.by
Moldova, Chisinau, MD-2004
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