Enviar artigo por via de e-mail Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals
- Autores: Tolkacheva E.A.1, Markevich V.P.2, Murin L.I.1
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Afiliações:
- Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
- Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester
- Edição: Volume 52, Nº 9 (2018)
- Páginas: 1097-1103
- Seção: Spectroscopy, Interaction with Radiation
- URL: https://bakhtiniada.ru/1063-7826/article/view/203955
- DOI: https://doi.org/10.1134/S1063782618090221
- ID: 203955
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Resumo
The processes of the formation and annealing of VnOm (n, m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm–1 as being related to local vibrational modes of V2O2 and V3O2 complexes, respectively.
Sobre autores
E. Tolkacheva
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
Autor responsável pela correspondência
Email: talkachova@physics.by
Belarus, Minsk, 220072
V. Markevich
Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester
Email: talkachova@physics.by
Reino Unido da Grã-Bretanha e Irlanda do Norte, Manchester, M13 9PL
L. Murin
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
Email: talkachova@physics.by
Belarus, Minsk, 220072
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