Мақаланы E-mail арқылы жіберу Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals
- Авторлар: Tolkacheva E.A.1, Markevich V.P.2, Murin L.I.1
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Мекемелер:
- Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
- Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester
- Шығарылым: Том 52, № 9 (2018)
- Беттер: 1097-1103
- Бөлім: Spectroscopy, Interaction with Radiation
- URL: https://bakhtiniada.ru/1063-7826/article/view/203955
- DOI: https://doi.org/10.1134/S1063782618090221
- ID: 203955
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Рұқсат берілді
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Аннотация
The processes of the formation and annealing of VnOm (n, m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm–1 as being related to local vibrational modes of V2O2 and V3O2 complexes, respectively.
Авторлар туралы
E. Tolkacheva
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
Хат алмасуға жауапты Автор.
Email: talkachova@physics.by
Белоруссия, Minsk, 220072
V. Markevich
Photon Science Institute, School of Electrical and Electronic Engineering, University of Manchester
Email: talkachova@physics.by
Ұлыбритания, Manchester, M13 9PL
L. Murin
Scientific and Practical Materials Research Center, National Academy of Sciences of Belarus
Email: talkachova@physics.by
Белоруссия, Minsk, 220072
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