Ion Synthesis: Si–Ge Quantum Dots

N. N. Gerasimenko; N. S. Balakleyskiy; A. D. Volokhovskiy; D. I. Smirnov; O. A. Zaporozhan

doi:10.1134/S1063782618050081

Ion Synthesis: Si–Ge Quantum Dots

Autores: Gerasimenko N.N.¹, Balakleyskiy N.S.², Volokhovskiy A.D.³, Smirnov D.I.⁴, Zaporozhan O.A.¹
Afiliações:
1. National Research University of Electronic Technology
2. Angstrrem
3. Angstrem-T
4. P.N. Lebedev Physical Institute of the RAS
Edição: Volume 52, Nº 5 (2018)
Páginas: 625-627
Seção: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
URL: https://bakhtiniada.ru/1063-7826/article/view/203222
DOI: https://doi.org/10.1134/S1063782618050081
ID: 203222

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We present a method of Si–Ge QDs formation by ion beam implantation (IBI) technique and high temperature annealing for self-organization. Implantation doses varied from 10¹⁴ to 10¹⁷ cm^–2, ion energies ranged from 50 to 150 keV, annealing proceeded at temperature of 950 to 1050°C in argon environment. Formed QDs show strong infrared (IR) photoluminescence (PL) in the temperature region 15–250 K.