Zeeman Splitting of Electron Spectrum in HgTe Quantum Wells Near the Dirac Point


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The Zeeman splitting of the conduction band in the HgTe quantum wells both with normal and inverted spectrum has been studied experimentally in a wide electron density range. The simultaneous analysis of the Shubnikov–de Haas oscillations in low magnetic fields at different tilt angles and of the shape of the oscillations in moderate magnetic fields gives a possibility to find the ratio of the Zeeman splitting to the orbital one and anisotropy of g-factor. It is shown that the ratios of the Zeeman splitting to the orbital one are close to each other for both types of structures, with a normal and inverted spectrum and they are close enough to the values calculated within kP method. In contrast, the values of g-factor anisotropy in the structures with normal and inverted spectra are strongly different and for both cases differ significantly from the calculated ones. We assume that such disagreement with calculations is a result of the interface inversion asymmetry in the HgTe quantum well, which is not taken into account in the kP calculations.

Sobre autores

A. Germanenko

School of Natural Sciences and Mathematics

Autor responsável pela correspondência
Email: alexander.germanenko@urfu.ru
Rússia, Ekaterinburg, 620002

G. Minkov

School of Natural Sciences and Mathematics; Institute of Metal Physics Russian Academy of Sciences

Email: alexander.germanenko@urfu.ru
Rússia, Ekaterinburg, 620002; Ekaterinburg, 620990

A. Sherstobitov

School of Natural Sciences and Mathematics; Institute of Metal Physics Russian Academy of Sciences

Email: alexander.germanenko@urfu.ru
Rússia, Ekaterinburg, 620002; Ekaterinburg, 620990

O. Rut

School of Natural Sciences and Mathematics

Email: alexander.germanenko@urfu.ru
Rússia, Ekaterinburg, 620002

S. Dvoretski

Institute of Semiconductor Physics Russian Academy of Sciences

Email: alexander.germanenko@urfu.ru
Rússia, Novosibirsk, 630090

N. Mikhailov

Institute of Semiconductor Physics Russian Academy of Sciences

Email: alexander.germanenko@urfu.ru
Rússia, Novosibirsk, 630090

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2018