Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

A. M. Mozharov; A. A. Vasiliev; A. D. Bolshakov; G. A. Sapunov; V. V. Fedorov; G. E. Cirlin; I. S. Mukhin

doi:10.1134/S1063782618040231

Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential

Autores: Mozharov A.M.¹, Vasiliev A.A.¹, Bolshakov A.D.¹, Sapunov G.A.¹, Fedorov V.V.¹, Cirlin G.E.¹^,2^,3, Mukhin I.S.¹^,2
Afiliações:
1. St. Petersburg Academic University
2. ITMO University
3. Institute for Analytical Instrumentation
Edição: Volume 52, Nº 4 (2018)
Páginas: 489-492
Seção: XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures
URL: https://bakhtiniada.ru/1063-7826/article/view/202837
DOI: https://doi.org/10.1134/S1063782618040231
ID: 202837

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In this work we have studied volt-ampere characteristics of single core-shell GaN/InGaN/GaN nanowire. It was experimentally shown that negative differential resistance effect can be obtained in the studied heterostructure. On the base of numerical calculation results the model describing negative differential resistance phenomenon was proposed. We assume this effect to be related with strong localization of current flow inside the nanowire and emergence of Gunn effect in this area.