Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

D. I. Bilenko; O. Ya. Belobrovaya; D. V. Terin; V. V. Galushka; I. V. Galushka; E. A. Zharkova; V. P. Polyanskaya; V. I. Sidorov; I. T. Yagudin

doi:10.1134/S1063782618030077

Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon

Authors: Bilenko D.I.¹, Belobrovaya O.Y.¹, Terin D.V.¹, Galushka V.V.¹, Galushka I.V.¹, Zharkova E.A.¹, Polyanskaya V.P.¹, Sidorov V.I.¹, Yagudin I.T.¹
Affiliations:
1. Saratov State University
Issue: Vol 52, No 3 (2018)
Pages: 331-334
Section: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
URL: https://bakhtiniada.ru/1063-7826/article/view/202589
DOI: https://doi.org/10.1134/S1063782618030077
ID: 202589

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a ²²⁶Ra radioisotope source and bremsstrahlung is demonstrated. The position of the longest photoluminescence wavelength tends to shift to the short-wavelength region of the spectrum. The emission efficiency increases upon irradiation of both the substrate and the layer formed.