Mechanism of the Semiconductor–Metal Phase Transition in Sm 1– x  Gd  x  S Thin Films

V. V. Kaminsky; S. M. Soloviev; G. D. Khavrov; N. V. Sharenkova

doi:10.1134/S1063782618010116

Mechanism of the Semiconductor–Metal Phase Transition in Sm_1–xGd_xS Thin Films

Autores: Kaminsky V.V.¹, Soloviev S.M.¹, Khavrov G.D.¹, Sharenkova N.V.¹
Afiliações:
1. Ioffe Institute
Edição: Volume 52, Nº 1 (2018)
Páginas: 41-43
Seção: Surfaces, Interfaces, and Thin Films
URL: https://bakhtiniada.ru/1063-7826/article/view/202224
DOI: https://doi.org/10.1134/S1063782618010116
ID: 202224

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Resumo

The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm_1–xGd_xS thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.