Email this article Mechanism of the Semiconductor–Metal Phase Transition in Sm1–xGdxS Thin Films
- Authors: Kaminsky V.V.1, Soloviev S.M.1, Khavrov G.D.1, Sharenkova N.V.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 52, No 1 (2018)
- Pages: 41-43
- Section: Surfaces, Interfaces, and Thin Films
- URL: https://bakhtiniada.ru/1063-7826/article/view/202224
- DOI: https://doi.org/10.1134/S1063782618010116
- ID: 202224
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Abstract
The influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm1–xGdxS thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.
About the authors
V. V. Kaminsky
Ioffe Institute
Author for correspondence.
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
S. M. Soloviev
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
G. D. Khavrov
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
N. V. Sharenkova
Ioffe Institute
Email: vladimir.kaminski@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
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