Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching

Ya. V. Levitskii; M. I. Mitrofanov; G. V. Voznyuk; D. N. Nikolayev; M. N. Mizerov; V. P. Evtikhiev

doi:10.1134/S1063782619110101

Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching

Autores: Levitskii Y.V.¹, Mitrofanov M.I.¹, Voznyuk G.V.¹, Nikolayev D.N.¹, Mizerov M.N.¹, Evtikhiev V.P.¹
Afiliações:
1. Ioffe Institute
Edição: Volume 53, Nº 11 (2019)
Páginas: 1545-1549
Seção: Fabrication, Treatment, and Testing of Materials and Structures
URL: https://bakhtiniada.ru/1063-7826/article/view/207330
DOI: https://doi.org/10.1134/S1063782619110101
ID: 207330

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The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.