Enviar artigo por via de e-mail Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures
- Autores: Lunina M.L.1, Lunin L.S.1,2, Alfimova D.L.1, Pashchenko A.S.1, Danilina E.M.1, Nefedov V.V.2
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Afiliações:
- Federal Research Center Southern Scientific Center, Russian Academy of Sciences
- Platov South-Russian State Polytechnic University (SRSTU (NPI))
- Edição: Volume 53, Nº 8 (2019)
- Páginas: 1088-1091
- Seção: Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors
- URL: https://bakhtiniada.ru/1063-7826/article/view/206649
- DOI: https://doi.org/10.1134/S1063782619080141
- ID: 206649
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Resumo
The results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.
Sobre autores
M. Lunina
Federal Research Center Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
L. Lunin
Federal Research Center Southern Scientific Center, Russian Academy of Sciences; Platov South-Russian State Polytechnic University (SRSTU (NPI))
Autor responsável pela correspondência
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006; Novocherkassk, 346400
D. Alfimova
Federal Research Center Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
A. Pashchenko
Federal Research Center Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
E. Danilina
Federal Research Center Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Rússia, Rostov-on-Don, 344006
V. Nefedov
Platov South-Russian State Polytechnic University (SRSTU (NPI))
Email: lunin_ls@mail.ru
Rússia, Novocherkassk, 346400
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