Luminescence Properties of CdxZn1 – xO Thin Films


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Аннотация

Thin CdxZn1 – xO films with a Cd content in the range from zero to 35 at % are synthesized by pulsed laser deposition. A record-breaking solubility limit of 30 at % of Cd in wurtzite-structured CdxZn1 – xO thin films is attained. Apart from the exciton peak, additional peaks associated with an inhomogeneous distribution of Cd in the samples are observed in the low-temperature (10 K) photoluminescence spectra of Cd0.15Zn0.85O and Cd0.3Zn0.7O films. An unsteady (S-like) temperature dependence of the spectral position of the exciton photoluminescence peak in CdxZn1 – xO films is observed. Such a dependence is associated with the effect of the localization of charge carriers.

Авторлар туралы

A. Lotin

Institute on Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”

Хат алмасуға жауапты Автор.
Email: lotin_82@mail.ru
Ресей, Shatura, Moscow region, 140700

O. Novodvorsky

Institute on Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”

Email: lotin_82@mail.ru
Ресей, Shatura, Moscow region, 140700

L. Parshina

Institute on Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”

Email: lotin_82@mail.ru
Ресей, Shatura, Moscow region, 140700

O. Khramova

Institute on Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”

Email: lotin_82@mail.ru
Ресей, Shatura, Moscow region, 140700

E. Cherebylo

Institute on Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”

Email: lotin_82@mail.ru
Ресей, Shatura, Moscow region, 140700

V. Mikhalevsky

Institute on Laser and Information Technologies—Branch of the Federal Scientific Research Center “Crystallography and Photonics”

Email: lotin_82@mail.ru
Ресей, Shatura, Moscow region, 140700

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