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Features of the Properties of Rare-Earth Semiconductors


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It is shown that the unique features of the physical properties of rare-earth semiconductor compounds are based on the small values of the ionization potentials of the rare-earth elements included in them. The reason for this is the presence of 4f shells in the electronic structure of the elements.

Sobre autores

V. Kaminski

Ioffe Institute

Autor responsável pela correspondência
Email: Vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021

N. Sharenkova

Ioffe Institute

Email: Vladimir.kaminski@mail.ioffe.ru
Rússia, St. Petersburg, 194021

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