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Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy
Gagis G.S., Levin R.V., Marichev A.E., Pushnyi B.V., Scheglov M.P., Ber B.Y., Kazantsev D.Y., Kudriavtsev Y.A., Vlasov A.S., Popova T.B., Chistyakov D.V., Kuchinskii V.I., Vasil’ev V.I.
Study of the Structural Properties of Silicon-on-Sapphire Layers in Hydride-Chloride Vapor-Phase Epitaxy
Sokolov E.M., Fedotov S.D., Statsenko V.N., Timoshenkov S.P., Emelyanov A.V.
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds
Vigdorovich E.N.
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy
Levin R.V., Vlasov A.S., Smirnov A.N., Pushnyi B.V.
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