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Vol 52, No 9 (2018)
Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method
Anisimov A.N., Wolfson A.A., Mokhov E.N.
PDF
(Eng)
Vol 52, No 10 (2018)
Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
Lundin W.V., Tsatsulnikov A.F., Rodin S.N., Sakharov A.V., Usov S.O., Mitrofanov M.I., Levitskii I.V., Evtikhiev V.P.
PDF
(Eng)
Vol 52, No 16 (2018)
Microstructural Evolution of MOVPE Grown GaN by the Carrier Gas
Demir I., Altuntas I., Kasapoğlu A.E., Mobtakeri S., Gür E., Elagoz S.
PDF
(Eng)
Vol 52, No 12 (2018)
Relation between the Electronic Properties and Structure of InAs/GaAs Quantum Dots Grown by Vapor-Phase Epitaxy
Gorshkov A.P., Volkova N.S., Pavlov D.A., Usov Y.V., Istomin L.A., Levichev S.B.
PDF
(Eng)
Vol 50, No 4 (2016)
Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy
Averichkin P.A., Donskov A.A., Dukhnovsky M.P., Knyazev S.N., Kozlova Y.P., Yugova T.G., Belogorokhov I.A.
PDF
(Eng)
Vol 52, No 11 (2018)
Investigation of the Anisotropy of the Structural Properties of GaN(0001) Layers Grown by MOVPE on a-Plane (11\(\bar {2}\)0) Sapphire
Yunin P.A., Drozdov Y.N., Khrykin O.I., Grigoryev V.A.
PDF
(Eng)
Vol 52, No 10 (2018)
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
Mintairov M.A., Evstropov V.V., Mintairov S.A., Salii R.A., Shvarts M.Z., Kalyuzhnyy N.A.
PDF
(Eng)
Vol 53, No 9 (2019)
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
Plankina S.M., Vikhrova O.V., Zvonkov B.N., Zubkov S.Y., Kriukov R.N., Nezhdanov A.V., Pavlov D.A., Pashen’kin I.Y., Sushkov A.A.
PDF
(Eng)
Vol 52, No 15 (2018)
Studying the Effect of Electrically Active Impurities Coming from Trimethylgallium Synthesized by Different Means on the Electrophysical Characteristics of Gallium Arsenide Epitaxial Layers
Revin M.V., Kotkov A.P., Ivanov V.A., Rad’kov Y.F., Svinkov N.V., Artemov A.N., Gribov B.G.
PDF
(Eng)
Vol 50, No 13 (2016)
Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.N.
PDF
(Eng)
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