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Vol 53, No 9 (2019)
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers
Prokhorov D.S., Shengurov V.G., Denisov S.A., Filatov D.O., Zdoroveishev A.V., Chalkov V.Y., Zaitsev A.V., Ved’ M.V., Dorokhin M.V., Baidakova N.A.
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(Eng)
Vol 53, No 9 (2019)
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition
Shengurov V.G., Filatov D.O., Denisov S.A., Chalkov V.Y., Alyabina N.A., Zaitsev A.V.
PDF
(Eng)
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