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Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide
Seredin P.V., Lenshin A.S., Fedyukin A.V., Goloshchapov D.L., Lukin A.N., Arsentyev I.N., Zhabotinsky A.V.
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers
Mokhov D.V., Berezovskaya T.N., Nikitina E.V., Shubina K.Y., Mizerov A.M., Bouravleuv A.D.
Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics
Novikov A.V., Yurasov D.V., Morozova E.E., Skorohodov E.V., Verbus V.A., Yablonskiy A.N., Baidakova N.A., Gusev N.S., Kudryavtsev K.E., Nezhdanov A.V., Mashin A.I.
Effect of ionic Ag+ transfer on localization of metal-assisted etching of silicon surface
Pyatilova O.V., Sysa A.V., Gavrilov S.A., Yakimova L.V., Pavlov A.A., Belov A.N., Raskin A.A.
Edge Doping in Graphene Devices on SiO2 Substrates
Vasilyeva G.Y., Smirnov D., Vasilyev Y.B., Greshnov A.A., Haug R.J.
Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy
Lipkova E.A., Efimova A.I., Gonchar K.A., Presnov D.E., Eliseev A.A., Lapshin A.N., Timoshenko V.Y.
Using Combined Optical Techniques to Control the Shallow Etching Process
Volokhovskiy A.D., Gerasimenko N.N., Petrakov D.S.
Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma
Okhapkin A.I., Yunin P.A., Drozdov M.N., Kraev S.A., Skorokhodov E.V., Shashkin V.I.
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