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Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers
Sokolova Z.N., Bakhvalov K.V., Lyutetskiy A.V., Pikhtin N.A., Tarasov I.S., Asryan L.V.
Pb1–xEuxTe alloys (0 ⩽ x ⩽ 1) as materials for vertical-cavity surface-emitting lasers in the mid-infrared spectral range of 4–5 μm
Pashkeev D.A., Selivanov Y.G., Chizhevskii E.G., Zasavitskiy I.I.
Violation of Local Electroneutrality in the Quantum Well of a Semiconductor Laser with Asymmetric Barrier Layers
Asryan L.V., Zubov F.I., BalezinaPolubavkina Y.S., Moiseev E.I., Muretova M.E., Kryzhanovskaya N.V., Maximov M.V., Zhukov A.E.
Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting
Emelyanov V.M., Pokrovskiy P.V., Kalyuzhnyy N.A., Nakhimovich M.V., Shvarts M.Z.
Stimulated Emission in the 1.3–1.5 μm Spectral Range from AlGaInAs Quantum Wells in Hybrid Light-Emitting III–V Heterostructures on Silicon Substrates
Kudryatvsev K.E., Dubinov A.A., Aleshkin V.Y., Yurasov D.V., Gorlachuk P.V., Ryaboshtan Y.L., Marmalyuk A.A., Novikov A.V., Krasilnik Z.F.
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