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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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A

Ali, Ghafar
Aliev, F. F.
Aliev, M. A.
Aliev, R. A.
Aliguliyeva, Kh. V.
Alikhanov, A. A.
Alikhanov, N. M. -R.
Aliyev, F. F.
Aliyev, Y. I.
Aliyeva, L. N.
Aliyeva, N. A.
Aliyeva, R. D.
Aliyeva, Y. N.
Aliyeva, Ye. N.
Alizade, E. G.
Allahkhah, A. A.
Alpatov, A. V.
Alperovich, V. L.
Alruwaili, Amani
Altuhov, V. I.
Altukhov, I. V.
Altukhov, V. I.
Altuntas, I.
Alvi, P. A.
Alyabieva, N. I.

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