Author Details
Shreter, Yu. G.
| Issue | Section | Title | File |
| Vol 50, No 5 (2016) | Fabrication, Treatment, and Testing of Materials and Structures | On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates | |
| Vol 50, No 10 (2016) | Physics of Semiconductor Devices | Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen | |
| Vol 51, No 9 (2017) | Physics of Semiconductor Devices | Hopping conductivity and dielectric relaxation in Schottky barriers on GaN |