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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Author Details

Author Details

Stepikhova, M. V.

Issue Section Title File
Vol 50, No 3 (2016) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties
Vol 50, No 8 (2016) Fabrication, Treatment, and Testing of Materials and Structures On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology
Vol 50, No 9 (2016) Fabrication, Treatment, and Testing of Materials and Structures Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
Vol 51, No 3 (2017) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics
Vol 52, No 9 (2018) Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface
Vol 53, No 10 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Ordered Arrays of Ge(Si) Quantum Dots Incorporated into Two-Dimensional Photonic Crystals
 

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