| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Conditions of growth of high-quality relaxed Si1–xGex layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire |
|
| 卷 51, 编号 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy |
|
| 卷 52, 编号 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Optoelectronics, Optical Properties |
Plasmon Resonance Induced Photoconductivity in the Yttria Stabilized Zirconia Films with Embedded Au Nanoclusters |
|
| 卷 52, 编号 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands |
|
| 卷 52, 编号 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition |
|
| 卷 53, 编号 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers |
|
