Informaçao sobre o Autor

Bolshakov, A. D.

Edição Seção Título Arquivo
Volume 50, Nº 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires
Volume 52, Nº 4 (2018) XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures Core-Shell III-Nitride Nanowire Heterostructure: Negative Differential Resistance and Device Application Potential
Volume 52, Nº 14 (2018) Infrared Microwave Phenomena in Nanostructures Effect of the Conductive Channel Cut-Off on Operation of n+nn+ GaN NW-Based Gunn Diode
Volume 52, Nº 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Microlens-Enhanced Substrate Patterning and MBE Growth of GaP Nanowires
Volume 52, Nº 16 (2018) 26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE TECHNOLOGY Self-Catalyzed MBE-Grown GaP Nanowires on Si(111): V/III Ratio Effects on the Morphology and Crystal Phase Switching
Volume 53, Nº 14 (2019) Nanostructures Characterization Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes