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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Browse Section Index > Elements of Integrated Electronics

Elements of Integrated Electronics

Issue Title File
Vol 53, No 15 (2019) Investigation of the Temperature Effect on the Output Parameters of Radioisotope Sources of Electricity Based on Double Energy Conversion of Radiative Decay PDF
(Eng)
Novikov S.G., Berintsev A.V., Alekseev A.S., Somov A.I., Svetukhin V.V.
Vol 53, No 15 (2019) Precession of Magnetization of a Spin-Valve Free Layer and Its Switching under the Effect of a Magnetic Field Perpendicular to the Anisotropy Axis PDF
(Eng)
Iusipova I.A.
Vol 53, No 15 (2019) Field-Emission Cathodes Based on Microchannel Plates PDF
(Eng)
Khamdokhov Z.M., Margushev Z.C., Khamdokhov E.Z., Teshev R.S., Bavizhev M.D.
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