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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Browse Section Index > Elements of Integral Electronics

Elements of Integral Electronics

Issue Title File
Vol 52, No 15 (2018) A Physical Model of an SOI Field-Effect Hall Sensor PDF
(Eng)
Korolev M.A., Pavlyuk M.I., Devlikanova S.S.
Vol 52, No 15 (2018) Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests PDF
(Eng)
Sergeev V.A., Frolov I.V., Shirokov A.A., Radaev O.A.
Vol 52, No 15 (2018) Analysis of the Switching Characteristics of MRAM Cells Based on Materials with Uniaxial Anisotropy PDF
(Eng)
Iusipova I.A.
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