| 期 |
标题 |
文件 |
| 卷 53, 编号 15 (2019) |
Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC |
(Eng)
|
|
Egorkin V., Zemlyakov V., Nezhentsev A., Gudkov V., Garmash V.
|
| 卷 53, 编号 15 (2019) |
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques |
(Eng)
|
|
Fedotov S., Sokolov E., Statsenko V., Romashkin A., Timoshenkov S.
|
| 卷 53, 编号 15 (2019) |
Study of the Formation Process of Memristor Structures Based on Copper Sulfide |
(Eng)
|
|
Belov A., Golishnikov A., Mastinin A., Perevalov A., Shevyakov V.
|
| 卷 53, 编号 15 (2019) |
Mathematical Model of the Evaporation of Amalgam Components in Discharge Radiation Sources |
(Eng)
|
|
Petrenko N., Puchnina S., Gavrilov S.
|
| 卷 53, 编号 15 (2019) |
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds |
(Eng)
|
|
Vigdorovich E.
|
| 卷 52, 编号 15 (2018) |
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition |
(Eng)
|
|
Novak A., Novak V., Dedkova A., Gusev E.
|
| 卷 52, 编号 15 (2018) |
Using Combined Optical Techniques to Control the Shallow Etching Process |
(Eng)
|
|
Volokhovskiy A., Gerasimenko N., Petrakov D.
|
| 卷 52, 编号 15 (2018) |
Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating |
(Eng)
|
|
Hang Thi Nguyen ., Yakubov A., Lazarenko P., Volkova A., Sherchenkov A., Kozyukhin S.
|
| 卷 52, 编号 15 (2018) |
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures |
(Eng)
|
|
Egorkin V., Zemlyakov V., Nezhentsev A., Garmash V.
|
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