XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015
| Issue | Title | File | |
| Vol 50, No 1 (2016) | Effect of the dopant concentration on the luminescence properties of InGaAs/GaAs spin light-emitting diodes with a mn δ layer |
 (Eng) |
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| Rykov A.V., Dorokhin M.V., Malysheva E.I., Demina P.B., Vikhrova O.V., Zdoroveishev A.V. | |||
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