| Шығарылым |
Атауы |
Файл |
| Том 50, № 9 (2016) |
On the problem of internal optical loss and current leakage in laser heterostructures based on AlGaInAs/InP solid solutions |
(Eng)
|
|
Veselov D., Shashkin I., Bakhvalov K., Lyutetskiy A., Pikhtin N., Rastegaeva M., Slipchenko S., Bechvay E., Strelets V., Shamakhov V., Tarasov I.
|
| Том 50, № 9 (2016) |
Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters |
(Eng)
|
|
Lunin L., Lunina M., Kravtsov A., Sysoev I., Blinov A.
|
| Том 50, № 9 (2016) |
On methods of determining the band gap of semiconductor structures with p–n junctions |
(Eng)
|
|
Vikulin I., Korobitsyn B., Kriskiv S.
|
| Том 50, № 8 (2016) |
Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H |
(Eng)
|
|
Abramov A., Andronikov D., Emtsev K., Kukin A., Semenov A., Terukova E., Titov A., Yakovlev S.
|
| Том 50, № 8 (2016) |
Dynamic thermoelectric model of a light-emitting structure with a current spreading layer |
(Eng)
|
|
Sergeev V., Hodakov A.
|
| Том 50, № 8 (2016) |
Comparison of the characteristics of solar cells fabricated from multicrystalline silicon with those fabricated from silicon obtained by the monolike technology |
(Eng)
|
|
Betekbaev A., Mukashev B., Pelissier L., Lay P., Fortin G., Bounaas L., Skakov D., Kalygulov D., Turmagambetov T., Lee V.
|
| Том 50, № 8 (2016) |
Transition times between the extremum points of the current–voltage characteristic of a resonant tunneling diode with hysteresis |
(Eng)
|
|
Grishakov K., Elesin V.
|
| Том 50, № 8 (2016) |
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact |
(Eng)
|
|
Babichev A., Zhang H., Guan N., Egorov A., Julien F., Messanvi A., Durand C., Eymery J., Tchernycheva M.
|
| Том 50, № 8 (2016) |
Heterojunction low-barrier gaas diodes with an improved reverse I–V characteristic |
(Eng)
|
|
Yunusov I., Kagadei V., Fazleeva A., Arykov V.
|
| Том 50, № 7 (2016) |
Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistors |
(Eng)
|
|
Kyuregyan A., Gorbatyuk A., Ivanov B.
|
| Том 50, № 7 (2016) |
Electrochemical lithiation of silicon with varied crystallographic orientation |
(Eng)
|
|
Astrova E., Rumyantsev A., Li G., Nashchekin A., Kazantsev D., Ber B., Zhdanov V.
|
| Том 50, № 7 (2016) |
On current spreading in solar cells: a two-parameter tube model |
(Eng)
|
|
Mintairov M., Evstropov V., Mintairov S., Timoshina N., Shvarts M., Kalyuzhnyy N.
|
| Том 50, № 6 (2016) |
Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes |
(Eng)
|
|
Zuev S., Kilessa G., Asanov E., Starostenko V., Pokrova S.
|
| Том 50, № 6 (2016) |
Experimental determination of the derivative of the current–voltage characteristic of a nonlinear semiconductor structure using modulation Fourier analysis |
(Eng)
|
|
Kuzmichev N., Vasyutin M., Shilkin D.
|
| Том 50, № 6 (2016) |
Narrowing of the emission spectra of high-power laser diodes with a volume Bragg grating recorded in photo-thermo-refractive glass |
(Eng)
|
|
Ivanov S., Nikonorov N., Ignat’ev A., Zolotarev V., Lubyanskiy Y., Pikhtin N., Tarasov I.
|
| Том 50, № 6 (2016) |
Method for increasing the carrier mobility in the channel of the 4H-SiC MOSFET |
(Eng)
|
|
Mikhaylov A., Afanasyev A., Ilyin V., Luchinin V., Reshanov S., Schöner A.
|
| Том 50, № 6 (2016) |
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect |
(Eng)
|
|
Gadzhiyev I., Buyalo M., Gubenko A., Egorov A., Usikova A., Il’inskaya N., Lyutetskiy A., Zadiranov Y., Portnoi E.
|
| Том 50, № 5 (2016) |
Radiation-stimulated processes in transistor temperature sensors |
(Eng)
|
|
Pavlyk B., Grypa A.
|
| Том 50, № 5 (2016) |
Biosensor properties of SOI nanowire transistors with a PEALD Al2O3 dielectric protective layer |
(Eng)
|
|
Popov V., Ilnitskii M., Zhanaev E., Myakon’kich A., Rudenko K., Glukhov A.
|
| Том 50, № 5 (2016) |
Charge transfer in rectifying oxide heterostructures and oxide access elements in ReRAM |
(Eng)
|
|
Stefanovich G., Pergament A., Boriskov P., Kuroptev V., Stefanovich T.
|
| Том 50, № 5 (2016) |
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n+-InAs heterostructure |
(Eng)
|
|
Il’inskaya N., Karandashev S., Karpukhina N., Lavrov A., Matveev B., Remennyi M., Stus N., Usikova A.
|
| Том 50, № 5 (2016) |
GaAs/InGaAsN heterostructures for multi-junction solar cells |
(Eng)
|
|
Nikitina E., Gudovskikh A., Lazarenko A., Pirogov E., Sobolev M., Zelentsov K., Morozov I., Egorov A.
|
| Том 50, № 5 (2016) |
Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers |
(Eng)
|
|
Levinshtein M., Ivanov P., Zhang Q., Palmour J.
|
| Том 50, № 5 (2016) |
Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range |
(Eng)
|
|
Zhukov A., Cirlin G., Reznik R., Samsonenko Y., Khrebtov A., Kaliteevski M., Ivanov K., Kryzhanovskaya N., Maximov M., Alferov Z.
|
| Том 50, № 5 (2016) |
Dependence of the electron capture velocity on the quantum-well depth in semiconductor lasers |
(Eng)
|
|
Sokolova Z., Bakhvalov K., Lyutetskiy A., Pikhtin N., Tarasov I., Asryan L.
|
| Нәтижелер 198 - 151/175 |
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