Email this article Study of the photoinduced degradation of tandem photovoltaic converters based on a-Si:H/μc-Si:H
- Authors: Abramov A.S.1,2, Andronikov D.A.1,2, Emtsev K.V.1,2, Kukin A.V.1,2, Semenov A.V.1,2, Terukova E.E.1,2, Titov A.S.1,2, Yakovlev S.A.1,2
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Affiliations:
- Ioffe Physical–Technical Institute
- RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
- Issue: Vol 50, No 8 (2016)
- Pages: 1074-1078
- Section: Physics of Semiconductor Devices
- URL: https://bakhtiniada.ru/1063-7826/article/view/197670
- DOI: https://doi.org/10.1134/S1063782616080030
- ID: 197670
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Abstract
The photoinduced degradation of photovoltaic converters based on an a-Si:H/µc-Si:H tandem structure under a standard illuminance of 1000 W/m2 is studied. The spectral and current–voltage characteristics of specially fabricated samples with various degrees of crystallinity of the intrinsic layer in the lower (microcrystalline) cascade are measured in the course of the tests.
About the authors
A. S. Abramov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194068
D. A. Andronikov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194068
K. V. Emtsev
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194068
A. V. Kukin
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194068
A. V. Semenov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194068
E. E. Terukova
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194068
A. S. Titov
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Author for correspondence.
Email: titovoz@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194068
S. A. Yakovlev
Ioffe Physical–Technical Institute; RD Center forThin-Film Technologies in Energetics under the Ioffe Institute, Ioffe Physical–Technical Institute
Email: titovoz@gmail.com
Russian Federation, St. Petersburg, 194021; St. Petersburg, 194068
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