| Issue |
Title |
File |
| Vol 50, No 3 (2016) |
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction |
(Eng)
|
|
Orletsky I.G., Ilashchuk M.I., Brus V.V., Marianchuk P.D., Solovan M.M., Kovalyuk Z.D.
|
| Vol 50, No 3 (2016) |
Layer-by-Layer Analysis of the Thickness Distribution of Silicon Dioxide in the Structure SiO2/Si(111) by Inelastic Electron Scattering Cross-Section Spectroscopy |
(Eng)
|
|
Pchelyakov O.P., Mikhlin Y.L., Parshin A.S., Kushchenkov S.A.
|
| Vol 50, No 3 (2016) |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
(Eng)
|
|
Detochenko A.P., Denisov S.A., Drozdov M.N., Mashin A.I., Gavva V.A., Bulanov A.D., Nezhdanov A.V., Ezhevskii A.A., Stepikhova M.V., Chalkov V.Y., Trushin V.N., Shengurov D.V., Shengurov V.G., Abrosimov N.V., Riemann H.
|
| Vol 50, No 3 (2016) |
Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation |
(Eng)
|
|
Popov V.D.
|
| Vol 50, No 2 (2016) |
GaAs structures with a gate dielectric based on aluminum-oxide layers |
(Eng)
|
|
Kalentyeva I.L., Vikhrova O.V., Zdoroveyshchev A.V., Danilov Y.A., Kudrin A.V.
|
| Vol 50, No 2 (2016) |
Defects in mercury-cadmium telluride heteroepitaxial structures grown by molecular-beam epitaxy on silicon substrates |
(Eng)
|
|
Mynbaev K.D., Zablotsky S.V., Shilyaev A.V., Bazhenov N.L., Yakushev M.V., Marin D.V., Varavin V.S., Dvoretsky S.A.
|
| Vol 50, No 2 (2016) |
Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates |
(Eng)
|
|
Khabibullin R.A., Yachmenev A.E., Lavrukhin D.V., Ponomarev D.S., Bugayev A.S., Maltsev P.P.
|
| Vol 50, No 2 (2016) |
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
(Eng)
|
|
Aleksandrov I.A., Zhuravlev K.S., Mansurov V.G.
|
| Vol 50, No 2 (2016) |
Structural and photoluminescence properties of low-temperature GaAs grown on GaAs(100) and GaAs(111)A substrates |
(Eng)
|
|
Galiev G.B., Klimov E.A., Grekhov M.M., Pushkarev S.S., Lavrukhin D.V., Maltsev P.P.
|
| Vol 50, No 1 (2016) |
Vertical heterostructures based on graphene and other 2D materials |
(Eng)
|
|
Antonova I.V.
|
| Vol 50, No 1 (2016) |
Assessment of the resistance to diffusion destruction of AlAs/GaAs nanoscale resonant-tunneling heterostructures by IR spectral ellipsometry |
(Eng)
|
|
Makeev M.O., Ivanov Y.A., Meshkov S.A.
|
| Vol 50, No 1 (2016) |
On controlling the electronic states of shallow donors using a finite-size metal gate |
(Eng)
|
|
Levchuk E.A., Makarenko L.F.
|
| 151 - 162 of 162 Items |
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