Email this article Two Stages of Surface-Defect Formation in a MOS Structure under Low-Dose Rate Gamma Irradiation
- Authors: Popov V.D.1
-
Affiliations:
- National Nuclear Research University MEPhI
- Issue: Vol 50, No 3 (2016)
- Pages: 349-351
- Section: Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
- URL: https://bakhtiniada.ru/1063-7826/article/view/196891
- DOI: https://doi.org/10.1134/S1063782616030209
- ID: 196891
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Abstract
The results of an experimental study of how surface defects are formed at the Si–SiO2 interface at γ-radiation dose rates of P = 0.1 and 1.0 rad/s are reported. It is found that the surface defects are formed in two stages. The defect-formation mechanisms are analyzed.
About the authors
V. D. Popov
National Nuclear Research University MEPhI
Author for correspondence.
Email: wdpopov@mail.ru
Russian Federation, Moscow, 115409
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