| Issue |
Title |
File |
| Vol 50, No 8 (2016) |
Room temperature de Haas–van Alphen effect in silicon nanosandwiches |
(Eng)
|
|
Bagraev N.T., Grigoryev V.Y., Klyachkin L.E., Malyarenko A.M., Mashkov V.A., Romanov V.V.
|
| Vol 50, No 8 (2016) |
Prompt quality monitoring of InSe and GaSe semiconductor crystals by the nuclear quadrupole resonance technique |
(Eng)
|
|
Samila A.P., Lastivka G.I., Khandozhko V.A., Kovalyuk Z.D.
|
| Vol 50, No 8 (2016) |
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects |
(Eng)
|
|
Aleksandrov I.A., Mansurov V.G., Zhuravlev K.S.
|
| Vol 50, No 8 (2016) |
Elastic strains and delocalized optical phonons in AlN/GaN superlattices |
(Eng)
|
|
Pankin D.V., Smirnov M.B., Davydov V.Y., Smirnov A.N., Zavarin E.E., Lundin W.V.
|
| Vol 50, No 7 (2016) |
Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fields |
(Eng)
|
|
Kuznetsova Y.V., Jmerik V.N., Nechaev D.V., Kuznetsov A.M., Zamoryanskaya M.V.
|
| Vol 50, No 7 (2016) |
Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth |
(Eng)
|
|
Romanov V.V., Dement’ev P.A., Moiseev K.D.
|
| Vol 50, No 7 (2016) |
Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure |
(Eng)
|
|
Vasilyev Y.B., Mikhailov N.N., Vasilyeva G.Y., Ivánov Y.L., Zakhar’in A.O., Andrianov A.V., Vorobiev L.E., Firsov D.A., Grigoriev M.N., Antonov A.V., Ikonnikov A.V., Gavrilenko V.I.
|
| Vol 50, No 7 (2016) |
Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial films |
(Eng)
|
|
Ivanov P.A., Kudoyarov M.F., Kozlovski M.A., Potapov A.S., Samsonova T.P.
|
| Vol 50, No 7 (2016) |
Study of deep levels in GaAs p–i–n structures |
(Eng)
|
|
Sobolev M.M., Soldatenkov F.Y., Kozlov V.A.
|
| Vol 50, No 7 (2016) |
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium |
(Eng)
|
|
Imenkov A.N., Grebenshchikova E.A., Shutaev V.A., Ospennikov A.M., Sherstnev V.V., Yakovlev Y.P.
|
| Vol 50, No 7 (2016) |
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing |
(Eng)
|
|
Krivyakin G.K., Volodin V.A., Kochubei S.A., Kamaev G.N., Purkrt A., Remes Z., Fajgar R., Stuchliková T.H., Stuchlik J.
|
| Vol 50, No 6 (2016) |
Oxidation model of polycrystalline lead-chalcogenide layers in an iodine-containing medium |
(Eng)
|
|
Maraeva E.V., Moshnikov V.A., Petrov A.A., Tairov Y.M.
|
| Vol 50, No 6 (2016) |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
(Eng)
|
|
Danilov L.V., Petukhov A.A., Mikhailova M.P., Zegrya G.G., Ivanov E.V., Yakovlev Y.P.
|
| Vol 50, No 6 (2016) |
Generation of transverse direct current in a superlattice under a bichromatic high-frequency electric and constant magnetic fields |
(Eng)
|
|
Zav’yalov D.V., Konchenkov V.I., Kryuchkov S.V.
|
| Vol 50, No 6 (2016) |
On the ohmicity of Schottky contacts |
(Eng)
|
|
Sachenko A.V., Belyaev A.E., Konakova R.V.
|
| Vol 50, No 6 (2016) |
Absorption of electromagnetic radiation in a quantum wire with an anisotropic parabolic potential in a transverse magnetic field |
(Eng)
|
|
Karpunin V.V., Margulis V.A.
|
| Vol 50, No 5 (2016) |
Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films |
(Eng)
|
|
Avilov V.I., Ageev O.A., Konoplev B.G., Smirnov V.A., Solodovnik M.S., Tsukanova O.G.
|
| Vol 50, No 5 (2016) |
Effect of cadmium-selenide quantum dots on the conductivity and photoconductivity of nanocrystalline indium oxide |
(Eng)
|
|
Il’in A.S., Fantina N.P., Martyshov M.N., Forsh P.A., Chizhov A.S., Rumyantseva M.N., Gaskov A.M., Kashkarov P.K.
|
| Vol 50, No 5 (2016) |
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range |
(Eng)
|
|
Egorov A.Y., Karachinsky L.Y., Novikov I.I., Babichev A.V., Nevedomskiy V.N., Bugrov V.E.
|
| Vol 50, No 5 (2016) |
A new simulation model for inhomogeneous Au/n-GaN structure |
(Eng)
|
|
Kavasoglu N., Kavasoglu A.S., Metin B.
|
| Vol 50, No 4 (2016) |
Impact ionization in nonuniformly heated silicon p+–n–n+ and n+–p–p+ structures |
(Eng)
|
|
Musaev A.M.
|
| Vol 50, No 4 (2016) |
Sulfur passivation of semi-insulating GaAs: Transition from Coulomb blockade to weak localization regime |
(Eng)
|
|
Bagraev N.T., Chaikina E.I., Danilovskii E.Y., Gets D.S., Klyachkin L.E., L’vova T.V., Malyarenko A.M.
|
| Vol 50, No 4 (2016) |
Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire |
(Eng)
|
|
El Ghazi H., Jorio A.
|
| Vol 50, No 3 (2016) |
Investigation of Ion-Implanted Photosensitive Silicon Structures by Electrochemical Capacitance–Voltage Profiling |
(Eng)
|
|
Yakovlev G.E., Frolov D.S., Zubkova A.V., Levina E.E., Zubkov V.I., Solomonov A.V., Sterlyadkin O.K., Sorokin S.A.
|
| Vol 50, No 3 (2016) |
Study of the Electron Distribution in GaN and GaAs after γ-Neutron Irradiation |
(Eng)
|
|
Tarasova E.A., Khananova A.V., Obolensky S.V., Zemlyakov V.E., Sveshnikov Y.N., Egorkin V.I., Ivanov V.A., Medvedev G.V., Smotrin D.S.
|
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